N-channel enhancement mode power MOSFET featuring 900V drain-source voltage and 3A continuous drain current. This single element silicon transistor utilizes pi-MOS III process technology. Housed in a TO-220NIS through-hole package with 3 pins and a tab, it offers a maximum power dissipation of 40W. Key electrical characteristics include a ±30V gate-source voltage, 4V gate threshold voltage, and 4300 mOhm drain-source resistance at 10V.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2700(MURATA1) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220NIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
15 + 5.6(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
pi-MOS III
Maximum Drain Source Voltage
900V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
3A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
4300@10VmOhm
Typical Gate Charge @ Vgs
25@10VnC
Typical Gate Charge @ 10V
25nC
Typical Input Capacitance @ Vds
750@25VpF
Maximum Power Dissipation
40000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
70pF
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SK2700(MURATA1) Datasheet
Download the complete datasheet for Toshiba 2SK2700(MURATA1) to view detailed technical specifications.
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