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Technical Specifications
Toshiba 4N35(SHORT) technical specifications.
General
Package/Case
PDIP
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
300mV
Forward Current
60mA
Input Type
DC
Isolation Voltage
2.5kV
Lead Free
Contains Lead
Max Input Current
60mA
Max Operating Temperature
100°C
Min Operating Temperature
-55°C
Mount
Through Hole
Number of Channels
1
Number of Circuits
1
Number of Elements
1
Output Current per Channel
100mA
Output Voltage
30V
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
300mW
Radiation Hardening
No
Reverse Breakdown Voltage
6V
RoHS Compliant
No
Compliance
RoHS
Not CompliantNo
Datasheet
Toshiba 4N35(SHORT) Datasheet
Download the complete datasheet for Toshiba 4N35(SHORT) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.