GT50JR22(STA1,E,S)

Name: GT50JR22(STA1,E,S) Toshiba
Brand: Toshiba
SKU: GT50JR22(STA1,E,S)

Trans IGBT Chip N-CH 600V 50A 230000mW 3-Pin(3+Tab) TO-3PN Magazine

MountingThrough Hole

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Toshiba GT50JR22(STA1,E,S) technical specifications.

Collector Emitter Voltage (VCEO)	600V
Element Configuration	Single
Lead Free	Lead Free
Max Collector Current	50A
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Mount	Through Hole
Packaging	Bulk

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.