Toshiba TC58BYG1S3HBAI6 technical specifications.
| Package/Case | VFBGA |
| Density | 2Gb |
| Interface | Parallel, Serial |
| Max Operating Temperature | 85°C |
| Memory Type | EEPROM, NAND, SLC NAND, |
| Min Operating Temperature | -40°C |
| Operating Supply Voltage | 1.8V |
| Packaging | Tray |
| Page Size | 2KB |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Benand™ |
| RoHS | Not CompliantNo |
Download the complete datasheet for Toshiba TC58BYG1S3HBAI6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.