The Toshiba TK18A60V(S4V,Q) is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 18A. The device has a power dissipation of 45W and a gate to source voltage of 30V. It is available in rail or tube packaging.
Resistance0.19R
PolarityN-CHANNEL
Power45W
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Technical Specifications
Toshiba TK18A60V(S4V,Q) technical specifications.
General
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Resistance | 0.19R |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK18A60V(S4V,Q) Datasheet
Download the complete datasheet for Toshiba TK18A60V(S4V,Q) to view detailed technical specifications.
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