The TLP181 is a single bipolar junction transistor with a collector-emitter saturation voltage of 400mV and a collector-emitter voltage rating of 80V. It has a current transfer ratio of 600% and a maximum operating temperature of 110°C. The transistor is suitable for surface mount applications and is packaged on a tape and reel. It is RoHS compliant and has a power dissipation of 200mW. The TLP181 can handle a forward current of 50mA and has a reverse breakdown voltage of 5V.
Voltage80V
MountingSurface Mount
Power200mW
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Technical Specifications
Toshiba TLP181(GR,F,T) technical specifications.
General
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Current Transfer Ratio | 600% |
| Forward Current | 50mA |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -25°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 200mW |
| Reverse Breakdown Voltage | 5V |
| RoHS Compliant | Yes |
| Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TLP181(GR,F,T) Datasheet
Download the complete datasheet for Toshiba TLP181(GR,F,T) to view detailed technical specifications.
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