The TLP181 is a single-element surface mount bipolar junction transistor with a collector-emitter voltage rating of 80V and a maximum operating temperature of 110°C. It has a current transfer ratio of 600% and a power dissipation of 200mW. The transistor is RoHS compliant and is packaged in tape and reel form for surface mount applications.
MountingSurface Mount
Power200mW
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Technical Specifications
Toshiba TLP181(GRL-TPL,F,T technical specifications.
General
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Current Transfer Ratio | 600% |
| Forward Current | 50mA |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -25°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 200mW |
| Reverse Breakdown Voltage | 5V |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TLP181(GRL-TPL,F,T Datasheet
Download the complete datasheet for Toshiba TLP181(GRL-TPL,F,T to view detailed technical specifications.
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