The TLP281GB-FT is a DC input transistor with a maximum collector current of 50mA and a maximum power dissipation of 200mW. It has a collector emitter saturation voltage of 400mV and operates over a temperature range of -55°C to 100°C. The transistor is packaged in a SOP package and is available in bulk packaging. It is not radiation hardened.
PackageSOP
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Technical Specifications
Toshiba TLP281GB-FT technical specifications.
General
| Package/Case | SOP |
| Collector Emitter Saturation Voltage | 400mV |
| Input Type | DC |
| Max Collector Current | 50mA |
| Max Input Current | 50mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Packaging | Bulk |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TLP281GB-FT Datasheet
Download the complete datasheet for Toshiba TLP281GB-FT to view detailed technical specifications.
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