The TLP283(TP) is a single bipolar junction transistor with a collector-emitter voltage rating of 100V and a forward current of 50mA. It features a collector-emitter saturation voltage of 400mV and a power dissipation of 200mW. The device is packaged in a surface-mount SOP package and is available on tape and reel. It operates over a temperature range of -55°C to 100°C.
PackageSOP
MountingSurface Mount
Power200mW
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Technical Specifications
Toshiba TLP283(TP) technical specifications.
General
| Package/Case | SOP |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Current Transfer Ratio | 400% |
| Forward Current | 50mA |
| Input Type | DC |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 200mW |
| Reverse Breakdown Voltage | 5V |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TLP283(TP) Datasheet
Download the complete datasheet for Toshiba TLP283(TP) to view detailed technical specifications.
No datasheet is available for this part.