The Toshiba TLP291 is a surface mount NPN transistor with a collector emitter voltage rating of 80V and a current transfer ratio of 300%. It can handle a forward current of 50mA and has a power dissipation of 200mW. The transistor is packaged in a SO package and is available on tape and reel. It operates over a temperature range of -55°C to 110°C.
PackageSO
MountingSurface Mount
Power200mW
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Technical Specifications
Toshiba TLP291(GRH-TP,E(O technical specifications.
General
| Package/Case | SO |
| Collector Emitter Voltage (VCEO) | 80V |
| Current Transfer Ratio | 300% |
| Forward Current | 50mA |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 200mW |
| Reverse Breakdown Voltage | 5V |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TLP291(GRH-TP,E(O Datasheet
Download the complete datasheet for Toshiba TLP291(GRH-TP,E(O to view detailed technical specifications.
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