PackagePDIP
MountingThrough Hole
Power150mW
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Technical Specifications
Toshiba TLP621-4BV technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 55V |
| Current Transfer Ratio | 600% |
| Forward Current | 50mA |
| Input Type | DC |
| Max Collector Current | 50mA |
| Max Input Current | 50mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Max Power Dissipation | 150mW |
| Mount | Through Hole |
| Number of Elements | 4 |
| Packaging | Bulk |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 5V |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TLP621-4BV Datasheet
Download the complete datasheet for Toshiba TLP621-4BV to view detailed technical specifications.
No datasheet is available for this part.