The TPC8212-H(TE12LQ,M is a Toshiba N-Channel 2 FET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 6A and a drain to source breakdown voltage of 30V. The device features a drain to source resistance of 21mR and a gate to source voltage of 20V. It is packaged in a SOIC package and is designed for surface mount applications.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Toshiba TPC8212-H(TE12LQ,M technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 840pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 21mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPC8212-H(TE12LQ,M Datasheet
Download the complete datasheet for Toshiba TPC8212-H(TE12LQ,M to view detailed technical specifications.
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