The TPC8221-H,LQ(S is a 2 N-Channel FET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 450mW and a maximum drain to source voltage of 30V. The device is packaged in a SOIC case and is designed for surface mount applications. It has an input capacitance of 830pF and a maximum Rds on of 25mΩ.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Toshiba TPC8221-H,LQ(S technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.1ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 830pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 25mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPC8221-H,LQ(S Datasheet
Download the complete datasheet for Toshiba TPC8221-H,LQ(S to view detailed technical specifications.
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