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Technical Specifications
Toshiba TPCF8B01(TE85L,F,M technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 470pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.35W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPCF8B01(TE85L,F,M Datasheet
Download the complete datasheet for Toshiba TPCF8B01(TE85L,F,M to view detailed technical specifications.
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