Toshiba
TPM2626-60
TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power
MountingSurface Mount
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Technical Specifications
Toshiba TPM2626-60 technical specifications.
General
Continuous Drain Current (ID)
26A
Gate to Source Voltage (Vgs)
-5V
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Mount
Surface Mount
Packaging
Bulk
Radiation Hardening
No
RoHS Compliant
No
Compliance
RoHS
Not CompliantNo
Datasheet
Toshiba TPM2626-60 Datasheet
Download the complete datasheet for Toshiba TPM2626-60 to view detailed technical specifications.
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