The ULN2003APG(OM) is a 7-channel NPN Darlington transistor array from Toshiba. It features a collector-emitter saturation voltage of 1.6V and a collector-emitter voltage of 50V. The device has a high current gain of 1000 and can handle a power dissipation of 760mW. It is available in a PDIP-14 package and is suitable for operation over a temperature range of -40°C to 85°C.
PackagePDIP
MountingThrough Hole
PolarityNPN
Power760mW
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Technical Specifications
Toshiba ULN2003APG(OM) technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| hFE Min | 1000 |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Elements | 7 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 760mW |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba ULN2003APG(OM) Datasheet
Download the complete datasheet for Toshiba ULN2003APG(OM) to view detailed technical specifications.
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