TT
ALF16N20K
Power Field-Effect Transistor, 16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, METAL PACKAGE-2
PackageTO-3
MountingThrough Hole
Power250W
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Technical Specifications
TT ALF16N20K technical specifications.
General
Package/Case
TO-3
Continuous Drain Current (ID)
16A
Drain to Source Voltage (Vdss)
200V
Gate to Source Voltage (Vgs)
20V
Height
8.7mm
Input Capacitance
1.4nF
Length
39mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Number of Elements
1
Power Dissipation
250W
Reach SVHC Compliant
No
RoHS Compliant
No
Width
25mm
Compliance
RoHS
Not Compliant
Datasheet
TT ALF16N20K Datasheet
Download the complete datasheet for TT ALF16N20K to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.