The FDG311N is a 20V power MOSFET with a continuous drain current of 1.9A and a maximum power dissipation of 236mW. It features a trench gate structure and is lead free. The device is designed for surface mount applications and is available in tape and reel packaging. The FDG311N operates over a temperature range of -40°C to 150°C.
Current Rating1.9A
MountingSurface Mount
Power750mW
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Technical Specifications
Vishay FDG311N technical specifications.
General
| Continuous Drain Current (ID) | 1.9A |
| Current Rating | 1.9A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | 8V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 585pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 236mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Power Dissipation | 750mW |
| Rds On Max | 86mR |
| Series | TrenchFET® |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay FDG311N Datasheet
Download the complete datasheet for Vishay FDG311N to view detailed technical specifications.
No datasheet is available for this part.