The FQA8N100C is a surface mount N-channel MOSFET from Vishay with a maximum drain to source voltage of 100V and continuous drain current of 1.1A. It features a maximum power dissipation of 2W and a drain to source resistance of 1.45 ohms. The device is packaged in a TO-261-4 case and is lead free. It has a maximum drain to source breakdown voltage of 1kV and a gate to source voltage of 30V. The FQA8N100C is RoHS compliant and meets Reach SVHC requirements.
PackageTO-261-4
Current Rating8A
MountingSurface Mount
Power225W
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Technical Specifications
Vishay FQA8N100C technical specifications.
General
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 1.1A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.45R |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Power Dissipation | 225W |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 1kV |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay FQA8N100C Datasheet
Download the complete datasheet for Vishay FQA8N100C to view detailed technical specifications.
No datasheet is available for this part.