The FQB50N06LTM is a 60V Surface Mount TrenchFET MOSFET with a continuous drain current rating of 11A and a maximum power dissipation of 1.6W. It features a drain to source breakdown voltage of 60V and a drain to source resistance of 21mR. The device is lead free and compliant with RoHS. It is packaged in a SOIC package and is available on tape and reel. The FQB50N06LTM is suitable for use in a variety of applications including power management and switching circuits.
PackageSOIC
Current Rating52.4A
MountingSurface Mount
Power3.75W
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Technical Specifications
Vishay FQB50N06LTM technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 52.4A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Power Dissipation | 3.75W |
| Rds On Max | 7mR |
| Reach SVHC Compliant | Yes |
| Series | TrenchFET® |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay FQB50N06LTM Datasheet
Download the complete datasheet for Vishay FQB50N06LTM to view detailed technical specifications.
No datasheet is available for this part.