The FQB50N06TM is a power MOSFET from Vishay with a maximum drain to source breakdown voltage of 500V and a continuous drain current rating of 2.1A. It has a maximum power dissipation of 30W and a drain to source resistance of 22mR. The device is packaged in a TO-220-3 package and is available in a lead-free configuration. The FQB50N06TM is suitable for use in a variety of applications including power supplies and motor control circuits.
PackageTO-220-3
Current Rating50A
MountingThrough Hole
Power3.75W
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Technical Specifications
Vishay FQB50N06TM technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.1A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 360pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Power Dissipation | 3.75W |
| Rds On Max | 3R |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay FQB50N06TM Datasheet
Download the complete datasheet for Vishay FQB50N06TM to view detailed technical specifications.
No datasheet is available for this part.