The FQD4N20TM is a 200V N-channel MOSFET from Vishay with a continuous drain current of 2.7A and a maximum power dissipation of 2W. It features a drain to source breakdown voltage of 200V and a drain to source resistance of 1.4 ohms. The device is packaged in a TO-261-4 surface mount package and is compliant with lead-free requirements. The FQD4N20TM is rated for operation over a temperature range of -40 to 150 degrees Celsius.
PackageTO-261-4
Current Rating3A
MountingSurface Mount
Power2.5W
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Technical Specifications
Vishay FQD4N20TM technical specifications.
General
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 2.7A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Power Dissipation | 2.5W |
| Rds On Max | 200mR |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay FQD4N20TM Datasheet
Download the complete datasheet for Vishay FQD4N20TM to view detailed technical specifications.
No datasheet is available for this part.