The FQP16N25 is a TrenchFET MOSFET with a continuous drain current rating of 16A and a drain to source breakdown voltage of 250V. It has a drain to source resistance of 230mR and a power dissipation of 142W. The device is packaged in a TSOP package and is designed for surface mount applications. The FQP16N25 is lead free and has a maximum gate to source voltage of 30V and a drain to source voltage of 8V.
PackageTSOP
Current Rating16A
MountingSurface Mount
Power142W
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Technical Specifications
Vishay FQP16N25 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 8V |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Power Dissipation | 142W |
| Rds On Max | 42mR |
| Series | TrenchFET® |
| DC Rated Voltage | 250V |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay FQP16N25 Datasheet
Download the complete datasheet for Vishay FQP16N25 to view detailed technical specifications.
No datasheet is available for this part.