The FQP19N20 is a surface mount N-Channel MOSFET with a maximum drain to source breakdown voltage of 200V and continuous drain current of 4A. It has a maximum power dissipation of 3.7W and is packaged in a TO-263-3 case. The device is lead free and compliant with Reach SVHC. Operating temperature range is not specified, but it is suitable for use in a variety of applications including power management and switching circuits.
PackageTO-263-3
Current Rating19.4A
MountingSurface Mount
Power140W
Quick Jump:
Technical Specifications
Vishay FQP19N20 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 19.4A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 3.7W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Power Dissipation | 140W |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay FQP19N20 Datasheet
Download the complete datasheet for Vishay FQP19N20 to view detailed technical specifications.
No datasheet is available for this part.