The FQP3N60C is a 600V power MOSFET with a continuous drain current of 35A and a drain to source breakdown voltage of 600V. It features a drain to source resistance of 3.4 ohms and a maximum power dissipation of 36 watts. The device is packaged in a TO-220 case and is suitable for surface mount applications. It is lead free and available in tape and reel packaging.
PackageTO-220
MountingSurface Mount
Power75W
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Technical Specifications
Vishay FQP3N60C technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 3.4R |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 36W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Power Dissipation | 75W |
| Rds On Max | 4.8mR |
| Series | TrenchFET® |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay FQP3N60C Datasheet
Download the complete datasheet for Vishay FQP3N60C to view detailed technical specifications.
No datasheet is available for this part.