The FQPF65N06 is a 60V power MOSFET with a maximum continuous drain current of 12A and a maximum power dissipation of 1.9W. It features a trench gate structure and is lead free. The device is rated for operation over a temperature range of -40°C to 150°C and is compliant with RoHS and SVHC regulations. The FQPF65N06 is available in a surface mount package, packaged on a tape and reel.
Vishay FQPF65N06 technical specifications.
| Capacitance | 220F |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 25V |
| Lead Free | Lead Free |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Power Dissipation | 56W |
| Rds On Max | 6.5mR |
| Reach SVHC Compliant | Yes |
| Series | TrenchFET® |
| DC Rated Voltage | 60V |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay FQPF65N06 to view detailed technical specifications.
No datasheet is available for this part.