The FQPF9N50CF is a 500V power MOSFET with a continuous drain current of 14A. It features a drain to source breakdown voltage of 500V and a drain to source resistance of 850mR. The device is packaged in a TO-263-3 surface mount package and is lead free. It has a maximum power dissipation of 88W and a power dissipation of 44W. The FQPF9N50CF is compliant with Reach SVHC regulations.
PackageTO-263-3
Capacitance220F
MountingSurface Mount
Power44W
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Technical Specifications
Vishay FQPF9N50CF technical specifications.
General
| Capacitance | 220F |
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 88W |
| Mount | Surface Mount |
| Packaging | Bulk |
| Power Dissipation | 44W |
| Rds On Max | 160mR |
| Reach SVHC Compliant | Yes |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay FQPF9N50CF Datasheet
Download the complete datasheet for Vishay FQPF9N50CF to view detailed technical specifications.
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