The LTV-816-D is a single PNP transistor from Vishay with a collector-emitter saturation voltage of 200mV and a collector-emitter voltage rating of 80V. It has a current transfer ratio of 600% and a forward current of 50mA. The device is packaged in a PDIP and is suitable for through-hole mounting. The transistor can operate at temperatures between -30°C and 110°C. It is compliant with RoHS regulations.
PackagePDIP
MountingThrough Hole
Power200mW
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Technical Specifications
Vishay LTV-816-D technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Current Transfer Ratio | 600% |
| Fall Time | 18000ns |
| Forward Current | 50mA |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -30°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 200mW |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Vishay LTV-816-D Datasheet
Download the complete datasheet for Vishay LTV-816-D to view detailed technical specifications.
No datasheet is available for this part.