The LTV-817M-D is a single-element NPN transistor packaged in a DIP format for through-hole mounting. It features a collector-emitter voltage rating of 35V and a forward current capability of 50mA. The device has a collector-emitter saturation voltage of 200mV and a power dissipation of 70mW. The LTV-817M-D operates over a temperature range of -30°C to 110°C.
PackageDIP
MountingThrough Hole
Power70mW
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Technical Specifications
Vishay LTV-817M-D technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 35V |
| Current Transfer Ratio | 600% |
| Fall Time | 18000ns |
| Forward Current | 50mA |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -30°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 70mW |
| Reverse Breakdown Voltage | 6V |
Compliance
| RoHS | Compliant |
Datasheet
Vishay LTV-817M-D Datasheet
Download the complete datasheet for Vishay LTV-817M-D to view detailed technical specifications.
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