The LTV817BS is a single channel PNP transistor from Vishay with a collector emitter saturation voltage of 200mV and a collector emitter voltage of 35V. It has a current transfer ratio of 260% and a forward current of 50mA. The device is suitable for use in surface mount applications and has an isolation voltage of 5kV. It can operate between -30°C and 110°C and has a power dissipation of 70mW.
PackageSMD/SMT
MountingSurface Mount
Power70mW
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Technical Specifications
Vishay LTV817BS technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 35V |
| Current Transfer Ratio | 260% |
| Fall Time | 18000ns |
| Forward Current | 50mA |
| Input Type | DC |
| Isolation Voltage | 5kV |
| Max Input Current | 50mA |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -30°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 70mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 6V |
Compliance
| RoHS | Compliant |
Datasheet
Vishay LTV817BS Datasheet
Download the complete datasheet for Vishay LTV817BS to view detailed technical specifications.
No datasheet is available for this part.