P-channel MOSFET, general purpose small signal transistor, features a 3.1A continuous drain current and a -30V drain-to-source voltage. Surface mountable in a SOT-23 package, it offers a low 53mΩ drain-source on-resistance. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 750mW. Key switching characteristics include a 10ns turn-on delay and a 15ns fall time.
PackageSOT-23
MountingSurface Mount
PolarityP-CHANNEL
Power750mW
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Technical Specifications
Vishay SI2343DS-T1-E3 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
3.1A
Drain to Source Resistance
53mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
53mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
540pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Nominal Vgs
-1V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
750mW
Radiation Hardening
No
Rds On Max
53mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
31ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2343DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2343DS-T1-E3 to view detailed technical specifications.
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