N-channel MOSFET, 20V Vdss, 15.2A continuous drain current, and 6mR drain-source on-resistance. This surface-mount component features a 3.7nF input capacitance and 2.1V threshold voltage. Operating across a -55°C to 150°C temperature range, it offers 30ns turn-on and 60ns turn-off delay times. Packaged in an 8-pin SOIC N for tape and reel, this RoHS compliant device is designed for efficient power management.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4114DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
15.2A
Drain to Source Resistance
6mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
6MR
Fall Time
30ns
Gate to Source Voltage (Vgs)
16V
Height
1.5mm
Input Capacitance
3.7nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
6mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.1V
Turn-Off Delay Time
60ns
Turn-On Delay Time
30ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4114DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4114DY-T1-GE3 to view detailed technical specifications.
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