N-channel Power MOSFET featuring TrenchFET process technology. 20V drain-source voltage and 35.8A continuous drain current. Low 2.6mOhm drain-source resistance at 10V gate-source voltage. 8-pin SOIC N package with gull-wing leads for surface mounting. Single element configuration with enhancement mode channel.
PackageSOIC N
MountingSurface Mount
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Technical Specifications
Vishay Si4186DY technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOIC N
Package Description
Small Outline IC Narrow Body
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5(Max)
Package Width (mm)
4(Max)
Package Height (mm)
1.55(Max)
Seated Plane Height (mm)
1.75(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
TrenchFET
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
35.8A
Maximum Drain Source Resistance
2.6@10VmOhm
Typical Gate Charge @ Vgs
60@10V|[email protected]nC
Typical Gate Charge @ 10V
60nC
Typical Input Capacitance @ Vds
3630@10VpF
Maximum Power Dissipation
3000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
No
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay Si4186DY Datasheet
Download the complete datasheet for Vishay Si4186DY to view detailed technical specifications.
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