PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
Vishay SI4420BDYT1E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
9.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
8.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
8.5mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1.4W
Radiation Hardening
No
Rds On Max
8.5mR
Reach SVHC Compliant
Unknown
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
40ns
Turn-On Delay Time
15ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4420BDYT1E3 Datasheet
Download the complete datasheet for Vishay SI4420BDYT1E3 to view detailed technical specifications.
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