P-channel, silicon, surface-mount field-effect transistor (FET) with a 1-element design. Features a continuous drain current (ID) of 9.7A and a drain-to-source voltage (Vdss) of -30V. Offers a low on-state resistance (Rds On) of 10.5mR. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.5W. Packaged in SO (SOP-8) for tape and reel distribution, this component is RoHS compliant.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4427BDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
9.7A
Drain to Source Resistance
10.5mR
Drain to Source Voltage (Vdss)
-30V
Dual Supply Voltage
-30V
Fall Time
110ns
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
-1.4V
Number of Channels
1
On-State Resistance
19.5mR
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
10.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
-600mV
Turn-Off Delay Time
242ns
Turn-On Delay Time
12ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4427BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4427BDY-T1-GE3 to view detailed technical specifications.
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