N-channel, surface-mount MOSFET with a 60V drain-to-source voltage and 9A continuous drain current. Features low 11mΩ drain-to-source resistance and a 2V threshold voltage. Operates across a -55°C to 175°C temperature range with a maximum power dissipation of 1.85W. Includes fast switching times with turn-on delay of 16ns and fall time of 30ns. Packaged in SO for tape and reel distribution.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4470EY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
9A
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
60V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.85W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
11mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
50ns
Turn-On Delay Time
16ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI4470EY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4470EY-T1-GE3 to view detailed technical specifications.
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