The SI4482DY-T1-GE3 is a N-CHANNEL MOSFET from Vishay with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 4.6A and a drain to source breakdown voltage of 100V. The device's drain to source resistance is 60mR and its gate to source voltage is 20V. The SI4482DY-T1-GE3 is available in a tape and reel packaging with a quantity of 2500 units.
Resistance0.06R
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4482DY-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Resistance | 0.06R |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI4482DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4482DY-T1-GE3 to view detailed technical specifications.
No datasheet is available for this part.