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Technical Specifications
Vishay SI4668DY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 16.2A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.654nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 10.5mR |
| Series | TrenchFET® |
| Turn-Off Delay Time | 73ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4668DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4668DY-T1-GE3 to view detailed technical specifications.
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