The SI4682DY-T1-GE3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 4.45W and a maximum drain to source breakdown voltage of 30V. The device is RoHS compliant and features a trenchFET design with a maximum Rds on of 9.4mR.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4682DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.595nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.45W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 9.4mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4682DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4682DY-T1-GE3 to view detailed technical specifications.
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