P-channel, silicon, surface-mount field-effect transistor with 8.7A continuous drain current and -30V drain-to-source voltage. Features 18mΩ maximum drain-source on-resistance, 1.96nF input capacitance, and 2.5W power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in SOIC for tape and reel mounting.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4835DDY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.7A
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
18mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
25V
Height
1.5mm
Input Capacitance
1.96nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
28ns
Turn-On Delay Time
44ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4835DDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4835DDY-T1-GE3 to view detailed technical specifications.
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