P-channel, 2-element silicon JFET with a continuous drain current of 2.4A and a drain-source breakdown voltage of -60V. Features a low drain-source on-resistance of 120mΩ, operating over a temperature range of -55°C to 175°C. This surface-mount device offers fast switching with turn-on delay time of 10ns and fall time of 15ns, packaged in an SOIC-8 case.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power1.4W
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Technical Specifications
Vishay SI4948BEY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
2.4A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
120mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
2
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.4W
Radiation Hardening
No
Rds On Max
120mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
50ns
Turn-On Delay Time
10ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4948BEY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4948BEY-T1-E3 to view detailed technical specifications.
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