The SI5853DC-T1-E3 is a surface mount P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 2.7A and a drain to source resistance of 110mR. The device is RoHS compliant and is packaged in a tape and reel format with 3000 units per package. The MOSFET is suitable for use in high-temperature applications and has a maximum power dissipation of 1.1W.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI5853DC-T1-E3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 110mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | LITTLE FOOT® |
| Turn-Off Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5853DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5853DC-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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