Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
Quick Jump:
Technical Specifications
Vishay SI5856DC-T1-E3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5856DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5856DC-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
