Resistance0.075R
MountingSurface Mount
PolarityP-CHANNEL
Power2.77W
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Technical Specifications
Vishay Si8447DB-T2-E1 technical specifications.
General
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
20V
Fall Time
15ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
600pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
13W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.77W
Rds On Max
75mR
Resistance
0.075R
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
30ns
Compliance
RoHS
Compliant
Datasheet
Vishay Si8447DB-T2-E1 Datasheet
Download the complete datasheet for Vishay Si8447DB-T2-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.