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Technical Specifications
Vishay SI8475EDB-T1-E1 technical specifications.
General
Continuous Drain Current (ID)
7.7A
Drain to Source Resistance
32mR
Drain to Source Voltage (Vdss)
20V
Fall Time
80000ns
Gate to Source Voltage (Vgs)
12V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
32mR
RoHS Compliant
Yes
Series
TrenchFET®
Compliance
RoHS
Compliant
Datasheet
Vishay SI8475EDB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8475EDB-T1-E1 to view detailed technical specifications.
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