Vishay
SI8489EDB-T2-E1
Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1 X 1 MM, 0.548 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MICRO FOOT, 4 PIN
PackageBGA
MountingSurface Mount
PolarityP-CHANNEL
Power1.8W
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Technical Specifications
Vishay SI8489EDB-T2-E1 technical specifications.
General
Package/Case
BGA
Continuous Drain Current (ID)
5.4A
Drain to Source Resistance
44mR
Drain to Source Voltage (Vdss)
20V
Fall Time
25ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
765pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.8W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.8W
Radiation Hardening
No
Rds On Max
44mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
50ns
Turn-On Delay Time
27ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI8489EDB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8489EDB-T2-E1 to view detailed technical specifications.
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