N-Channel Power MOSFET featuring 40V drain-source voltage and 32A continuous drain current. This single-element silicon Metal-Oxide-Semiconductor FET boasts a low 0.0045ohm on-resistance. Designed for high-temperature operation up to 175°C, it is housed in a 4-pin POWERPAK SO-8L package. The component is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Vishay SQJ412EP-T1_GE3 technical specifications.
General
Max Operating Temperature
175
Number of Terminals
4
Terminal Position
SINGLE
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Vishay SQJ412EP-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQJ412EP-T1_GE3 to view detailed technical specifications.
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