N-channel power MOSFET with 30V drain-source voltage and 50A continuous drain current. Features low 5.1mΩ Rds On, 1V threshold voltage, and fast switching times including 8ns turn-on delay and 9ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 59.5W. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component is suitable for general-purpose power applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SUP50N03-5M1P-GE3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
50A
Drain to Source Resistance
4.2mR
Drain to Source Voltage (Vdss)
30V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.78nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
59.5W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Bulk
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
5.1mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
35ns
Turn-On Delay Time
8ns
Weight
0.211644oz
Compliance
RoHS
Compliant
Datasheet
Vishay SUP50N03-5M1P-GE3 Datasheet
Download the complete datasheet for Vishay SUP50N03-5M1P-GE3 to view detailed technical specifications.
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