N-channel MOSFET with 100V drain-source voltage and 190A continuous drain current. Features 5.4mR drain-to-source resistance and 6.5mR Rds On max. Operates with a nominal gate-source voltage of 3.3V and a threshold voltage of 3.3V. Offers fast switching with turn-on delay time of 45ns and fall time of 335ns. Housed in a SOT-227-4 package, this component supports chassis, surface, and screw mounting. Maximum power dissipation is 568W, with an operating temperature range of -55°C to 150°C.
PackageSOT-227-4
MountingChassis Mount, Surface Mount, Screw
PolarityN-CHANNEL
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Technical Specifications
Vishay VS-FB190SA10 technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
190A
Drain to Source Resistance
5.4mR
Drain to Source Voltage (Vdss)
100V
Fall Time
335ns
Gate to Source Voltage (Vgs)
20V
Height
12.3mm
Input Capacitance
10.7nF
Length
38.3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
568W
Mount
Chassis Mount, Surface Mount, Screw
Nominal Vgs
3.3V
Number of Channels
1
Package Quantity
10
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
6.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
3.3V
Turn-Off Delay Time
181ns
Turn-On Delay Time
45ns
Weight
1.058219oz
Width
25.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay VS-FB190SA10 Datasheet
Download the complete datasheet for Vishay VS-FB190SA10 to view detailed technical specifications.
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