Advanced Linear Devices
ALD1103PB
Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14
PackagePDIP
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Advanced Linear Devices ALD1103PB technical specifications.
General
Package/Case
PDIP
Continuous Drain Current (ID)
-16mA
Drain to Source Breakdown Voltage
-12V
Drain to Source Resistance
270R
Gate to Source Voltage (Vgs)
13.2V
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Package Quantity
25
Polarity
P-CHANNEL
Power Dissipation
500mW
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Advanced Linear Devices ALD1103PB Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1103PB to view detailed technical specifications.
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